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PD- 91834A
IRG4CC71KB
IRG4CC71KB IGBT Die in Wafer Form
C
600 V Size 7.1
Ultra-Fast Speed Circuit Rated Rated
G E
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 1.7V Max. 600V Min. 3.0V Min., 6.5V Max. 300 A Max. 1.1 A Max. Test Conditions IC = 10A, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A TJ = 25C, VCE = 600V TJ = 25C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number01-5271 Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4PSC71K Cr-NiV-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.305" x 0.390" 150mm, with std. < 100 > flat .015" + / -.003" 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C
Die Outline
www.irf.com
11/28/05
IRG4CC71KB
Additional Testing and Screening For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level testing, please contact your local IR Sales. Shipping Three shipping options are offered as standard. * Un-sawn wafer * Die in waffle pack * Die on film Tape and Reel is also available for some products. Please consult your local IR sales office or email http:/ /die.irf.com for additional information. Please specify your required shipping option when requesting prices and ordering Die product. If not specified, Un-sawn wafer will be assumed. Handling * * * Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. Product must be handled only in a class 10,000 or better-designated clean room environment. Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip should be used.
Wafer/Die Storage * * * * * * Proper storage conditions are necessary to prevent product contamination and/or degradation after shipment. Un-sawn wafers and singulated die can be stored for up to 12 months when in the original sealed packaging at room temperature (45% +/- 15% RH controlled environment). Un-sawn wafers and singulated die that have been opened can be stored when returned to their containers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15% RH controlled environment). Note: To reduce the risk of contamination or degradation, it is recommended that product not being used in the assembly process be returned to their original containers and resealed with a vacuum seal process. Sawn wafers on a film frame are intended for immediate use and have a limited shelf life. Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf life. This is primarily due to the nature of the adhesive tape used to hold the product in the carrier tape cavity. This product can be stored for up to 30 days. This applies whether or not the material has remained in its original sealed container.
Further Information For further information please contact your local IR Sales office or email your enquiry to http://die.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/05

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